Electrical Properties of Double Perovskite Ho2NiZrO6

被引:0
|
作者
Kumar, Nishant [1 ]
Prasad, S. [1 ]
Sinha, T. P. [2 ]
机构
[1] TM Bhagalpur Univ, Dept Phys, Bhagalpur 812007, India
[2] Bose Inst, Dept Phys, Kolkata 700009, India
关键词
Electrical Properties; Perovskite; Dielectric Spectroscopy; Dielectric Relaxation;
D O I
10.1166/asl.2016.6879
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The double perovskite oxide Holmium nickel zirconate, Ho2NiZrO6 (HNZ) is synthesized by a solid-state reaction technique. The X-ray diffraction pattern of the sample at room temperature shows a monoclinic phase. The field dependence of dielectric response and the loss tangent of the sample are measured in a frequency range from 100 Hz to 1 MHz and in a temperature range from 313 K to 723 K. An analysis of the real and imaginary parts of the dielectric permittivity with frequency is performed, assuming a distribution of relaxation times as confirmed by Cole-Cole plots. The frequency dependence of loss peaks is found to obey an Arrhenius law with the activation energy of 0.381 eV.
引用
收藏
页码:581 / 583
页数:3
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