Nature of the superconductor-insulator transition in disordered superconductors

被引:317
作者
Dubi, Yonatan
Meir, Yigal [1 ]
Avishai, Yshai
机构
[1] Ben Gurion Univ Negev, Dept Phys, IL-84105 Beer Sheva, Israel
[2] Ben Gurion Univ Negev, Ilse Katz Ctr Meso & Nano Scale Sci & Technol, IL-84105 Beer Sheva, Israel
关键词
D O I
10.1038/nature06180
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The interplay of superconductivity and disorder has intrigued scientists for several decades. Disorder is expected to enhance the electrical resistance of a system, whereas superconductivity is associated with a zero-resistance state. Although superconductivity has been predicted to persist even in the presence of disorder(1), experiments performed on thin films have demonstrated a transition from a superconducting to an insulating state with increasing disorder or magnetic field(2). The nature of this transition is still under debate, and the subject has become even more relevant with the realization that high-transition-temperature (high-T-c) superconductors are intrinsically disordered(3-5). Here we present numerical simulations of the superconductor-insulator transition in two-dimensional disordered superconductors, starting from a microscopic description that includes thermal phase fluctuations. We demonstrate explicitly that disorder leads to the formation of islands where the superconducting order is high. For weak disorder, or high electron density, increasing the magnetic field results in the eventual vanishing of the amplitude of the superconducting order parameter, thereby forming an insulating state. On the other hand, at lower electron densities or higher disorder, increasing the magnetic field suppresses the correlations between the phases of the superconducting order parameter in different islands, giving rise to a different type of superconductor-insulator transition. One of the important predictions of this work is that in the regime of high disorder, there are still superconducting islands in the sample, even on the insulating side of the transition. This result, which is consistent with experiments(6,7), explains the recently observed huge magneto-resistance peak in disordered thin films(8-10) and may be relevant to the observation of 'the pseudo-gap phenomenon' in underdoped high-T-c superconductors(11,12).
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页码:876 / 880
页数:5
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