Fixed pattern deviations in Si pixel detectors measured using the Medipix1 readout chip

被引:8
作者
Tlustos, L [1 ]
Davidson, D
Campbell, M
Heijne, E
Mikulec, B
机构
[1] CERN, ETT, TT, CH-1211 Geneva 23, Switzerland
[2] Univ Glasgow, Dept Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland
关键词
silicon detectors; photon counting; spatial resolution; dopant concentration;
D O I
10.1016/S0168-9002(03)01557-2
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Dopant fluctuations and other defects in silicon wafers can lead to systematic errors in several parameters in particle or single-photon detection. In imaging applications non-uniformities in sensors or readout give rise to fixed pattern image noise and degradation of achievable spatial resolution for a given flux. High granularity pixel detectors offer the possibility to investigate local properties of the detector material on a microscopic scale. In this paper, we study fixed pattern detection fluctuations and detector inhomogeneities using the Medipix1 readout chip. Low-frequency fixed pattern signal deviations due to dopant inhomogeneities can be separated from high-frequency deviations. (C) 2003 Published by Elsevier Science B.V.
引用
收藏
页码:102 / 108
页数:7
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