Photoreflectance Spectroscopic Characterization of Si with SiO2 and HfO2 Dielectric Layers

被引：0

作者：

Zhang, Tianhao ^{[1
]}

Di, Ming ^{[1
]}

Bersch, Eric J. ^{[1
]}

Chouaib, Houssam ^{[2
]}

Salnik, Alex ^{[2
]}

Nicolaides, Lena ^{[2
]}

Bevis, Chris ^{[2
]}

Consiglio, Steven ^{[3
]}

Clark, Robert D. ^{[3
]}

Diebold, Alain C. ^{[1
]}

机构：

[1] SUNY Albany, Coll Nanoscale Sci & Engn, 255 Fuller Rd, Albany, NY 12203 USA

[2] KLA Tencor Corp, San Jose, CA 95134 USA

[3] TEL Technol Ctr Amer LLC, Albany, NY 12203 USA

来源：

FRONTIERS OF CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2009 | 2009年 / 1173卷

关键词：

photoreflectance; modulation spectroscopy; high-kappa; dielectric; defects; surface potential; SILICON; TEMPERATURE; STRAIN;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Photoreflectance (PR) spectroscopy is employed as a non-destructive and contactless technique for the characterization of silicon with SiO2 and HfO2 dielectric layers. The position of PR spectra reveals the critical point energy and the magnitude indicates the surface potential in silicon. By fitting PR spectra to a third-derivative functional form, we find the critical point of silicon with a 1.0 nm SiO2 layer is 3.42 eV. The PR magnitude of samples with HfO2 dielectric layer decreases with layer thickness. This indicates the decreasing of surface potential with high-kappa layer thickness, possibly due to increased charge defects in the layer.

引用

页码：109 / +

页数：3

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