Optimization of the design of a crucible for a SiC sublimation growth system using a global model

被引：17
作者：
Chen, X. J. [1 ]
Liu, L. J. [1 ]
Tezuka, H. [2 ]
Usuki, Y. [2 ]
Kakimoto, K. [1 ]
机构：
[1] Kyushu Univ, Res Inst Appl Mech, Fukuoka 8168580, Japan
[2] Furukawa Co Ltd, R&D Div, Tsukuba, Ibaraki 3050856, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 7-9期
关键词：
computer simulation; heat transfer; substrates; growth from vapor;
D O I：
10.1016/j.jcrysgro.2007.11.016
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Induction heating, temperature field and growth rate for a sublimation growth system of silicon carbide were calculated by using a global simulation model. The effects of shape of the crucible on temperature distribution and growth rate were investigated. It was found that thickness of the substrate holder, distance between the powder and substrate, and angle between the crucible wall and powder free surface are important for growth rate and crystal quality. Finally, a curved powder free surface was also studied. The results indicate that the use of a curved powder free surface is also an effective method for obtaining a higher growth rate. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：1810 / 1814
页数：5
相关论文
共 16 条
  • [1] Role of temperature gradient in bulk crystal growth of SiC
    Balkas, CM
    Maltsev, AA
    Roth, MD
    Yushin, NK
    [J]. SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 79 - 82
  • [2] Modeling of heat transfer and kinetics of physical vapor transport growth of silicon carbide crystals
    Chen, QS
    Zhang, H
    Prasad, V
    Balkas, CM
    Yushin, NK
    [J]. JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, 2001, 123 (06): : 1098 - 1109
  • [3] Kinetics and modeling of sublimation growth of silicon carbide bulk crystal
    Chen, QS
    Zhang, H
    Prasad, V
    Balkas, CM
    Yushin, NK
    Wang, S
    [J]. JOURNAL OF CRYSTAL GROWTH, 2001, 224 (1-2) : 101 - 110
  • [4] AN INTEGRATED PROCESS MODEL FOR THE GROWTH OF OXIDE CRYSTALS BY THE CZOCHRALSKI METHOD
    DERBY, JJ
    ATHERTON, LJ
    GRESHO, PM
    [J]. JOURNAL OF CRYSTAL GROWTH, 1989, 97 (3-4) : 792 - 826
  • [5] ON THE SUBLIMATION GROWTH OF SIC BULK CRYSTALS - DEVELOPMENT OF A NUMERICAL PROCESS MODEL
    HOFMANN, D
    HEINZE, M
    WINNACKER, A
    DURST, F
    KADINSKI, L
    KAUFMANN, P
    MAKAROV, Y
    SCHAFER, M
    [J]. JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) : 214 - 219
  • [6] SiC-bulk growth by physical-vapor transport and its global modelling
    Hofmann, D
    Eckstein, R
    Kolbl, M
    Makarov, Y
    Muller, SG
    Schmitt, E
    Winnacker, A
    Rupp, R
    Stein, R
    Volkl, J
    [J]. JOURNAL OF CRYSTAL GROWTH, 1997, 174 (1-4) : 669 - 674
  • [7] HURLE DTJ, 1996, HDB CRYSTAL GROWTH, V2, P616
  • [8] Flux-controlled sublimation growth by an inner guide-tube
    Kitou, Y
    Bahng, W
    Kato, T
    Nishizawa, S
    Arai, K
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 83 - 86
  • [9] KULIK AV, 2001, MAT RES SOC S P, V640
  • [10] Partly three-dimensional global modeling of a silicon Czochralski furnace. I. Principles, formulation and implementation of the model
    Liu, LJ
    Kakimoto, K
    [J]. INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 2005, 48 (21-22) : 4481 - 4491
12