Epitaxial insulator for bottom-gate field-effect devices based on TiO2

被引：8

作者：

Katayama, Masao ^{[1
,2
]}

Koinuma, Hideomi ^{[2
,3
,4
]}

Matsumoto, Yuji ^{[1
,2
]}

机构：

[1] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Japan Sci & Technol Corp, CREST, Kawaguchi, Saitama 3320012, Japan

[3] Univ Tokyo, Grad Sch Frontier Sci, Chiba 2778568, Japan

[4] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2008年 / 148卷 / 1-3期

基金：

日本科学技术振兴机构;

关键词：

electric field effect; epitaxy of thin film; titanium dioxide;

D O I：

10.1016/j.mseb.2007.09.050

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Field-effect devices with bottom-gate structure based on anatase TiO2 active channels were fabricated. The key factor to achieve this was the quality of epitaxial insulator layers, viz.; the insulating property and their crystallinity, because they work not only as a well insulator for field-effect devices but also as a template for the subsequent growth of epitaxial active layers. Our devices showed typical transistor actions. On-to-off current ratio exceeded 10(4) and the field effect mobility of 0.04 cm(2)/V S were obtained. Interestingly, the device characteristics were found to be sensitive to ambient and light, suggesting their potential for manipulating the fruitful TiO2 surface functions by tuning the gate voltage. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：19 / 21

页数：3

共 13 条

[1] Electrostatic modulation of superconductivity in ultrathin GdBa2Cu3O7-x films [J].