Intrinsic evolutions of optical functions, band gap, and higher-energy electronic transitions in VO2 film near the metal-insulator transition region

被引：46

作者：

Li, W. W. ^{[1
]}

Yu, Q. ^{[1
]}

Liang, J. R. ^{[2
,3
]}

Jiang, K. ^{[1
]}

Hu, Z. G. ^{[1
]}

Liu, J. ^{[2
,4
]}

Chen, H. D. ^{[2
]}

Chu, J. H. ^{[1
]}

机构：

[1] E China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

[3] Tianjin Univ, Sch Elect & Informat Engn, Tianjin 300072, Peoples R China

[4] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 24期

关键词：

VANADIUM DIOXIDE; MOTT TRANSITION; THIN-FILMS;

D O I：

10.1063/1.3665626

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transmittance spectra of (011) vanadium dioxide (VO2) film have been studied in the temperature range of 45-80 degrees C. Owing to increasing carrier concentration, the near-infrared extinction coefficient and optical conductivity around metal-insulator transition (MIT) rapidly increase with the temperature. Moreover, three electronic transitions can be uniquely assigned and show the hysteresis behavior near the MIT region. It was found that the optical band gap decreases from 0.457 to 0.042 eV before the MIT, then reduces to zero for the metal state. This confirms the fact that the a(1g) and e(g)(pi) bands are moved close and finally overlap with the temperature. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3665626]

引用

页数：3

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