An upgraded TOF-SIMS VG Ionex IX23LS: Study on the negative secondary ion emission of III-V compound semiconductors with prior neutral cesium deposition

被引：17
作者：
Ghumman, C. A. A. [1 ]
Moutinho, A. M. C. [1 ]
Santos, A. [1 ]
Teodoro, O. M. N. D. [1 ]
Tolstogouzov, A. [1 ]
机构：
[1] Univ Nova Lisboa, Dept Fis, Ctr Phys & Technol Res CeFITec, Fac Ciencias & Tecnol FCT, P-2829516 Caparica, Portugal
来源：
APPLIED SURFACE SCIENCE | 2012年 / 258卷 / 07期
关键词：
TOF-SIMS; III-V semiconductors; Neutral cesium deposition; Work function; Secondary ion yield enhancement; Electronegativity; FLIGHT MASS-SPECTROMETER; WORK-FUNCTION CHANGES; YIELD VARIATIONS; BOMBARDMENT; CS+; IDENTIFICATION; SPUTTER; LIQUIDS;
D O I：
10.1016/j.apsusc.2011.10.079
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A TOF-SIMS VG Ionex IX23LS with upgraded data acquisition and control system was used to study the secondary emission of negative atomic and cluster ions of non-metallic elements (P, As and Sb) upon a 19 keV Ga+ bombardment of non-degenerated III-V semiconductors (GaP, GaAs, GaSb, InP, InAs and InSb) with prior neutral Cs deposition from a getter dispenser. It was found that surface cesiation enhances the peak intensity of all negative ion species; in the case of atomic ions, the greatest increase (360) was observed for P-emitted from InP. Such an enhancement was larger for In-based than for Ga-based compounds. We explained that in terms of an electronegativity difference between the composing atoms of III-V semiconductors. The greater electronegativity difference (bond ionicity) of In-based compounds resulted in the greater Cs-induced work function decrease leading to a higher increase in the ionization probability of secondary ions. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：2490 / 2497
页数：8
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