The Effect of Fluorine Doping on the Characteristic Behaviour of CdTe

Fluorine which is an n-type dopant of cadmium telluride thin films was included during growth from a cadmium nitrate [Cd(NO3)(2)center dot 4H(2)O] bath using an electrodeposition technique. The fluorine concentration in the Cd(NO3)(2)center dot 4H(2)O baths were varied between 0.5 ppm and 50 ppm in order to determine its effect on the optical, structural, morphological and electrical properties of the as-deposited and the post-growth-treated layers. These characterisations were carried out using x-ray diffraction, ultraviolet-visible spectrophotometry, scanning electron microscopy, energy dispersive x-rays spectroscopy, photoelectrochemical cell measurement, direct current conductivity measurement and fully fabricated device characterisation. The results are systematically reported in this paper.