Characteristics and applications of plasma enhanced-atomic layer deposition

被引：76

作者：

Kim, Hyungjun ^{[1
]}

机构：

[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 20期

关键词：

Atomic layer deposition; Plasma deposition; Device fabrication; Thin film deposition; THIN-FILMS; METAL; METALLIZATION; GROWTH;

D O I：

10.1016/j.tsf.2011.01.404

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Atomic layer deposition (ALD) is expected to play an important role in future device fabrication due to various benefits, such as atomic level thickness control and excellent conformality. Plasma enhanced ALD (PE-ALD) allows deposition at significantly lower temperatures with better film properties compared to that of conventional thermal ALD. In addition, since ALD is a surface-sensitive deposition technique, surface modification through plasma exposure can be used to alter nucleation and adhesion. In this paper, characteristics of PE-ALD for various applications in semiconductor fabrication are presented through comparison to thermal ALD. The results indicate that the PE-ALD processes are versatile methods to enable nanoscale manufacturing in emerging applications. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：6639 / 6644

页数：6

共 18 条

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