High-performance solution processed oxide TFT with aluminum oxide gate dielectric fabricated by a sol-gel method

We have studied the fabrication of solution processed aluminum-oxide (AlOx) gate dielectric at the maximum process temperature of 300 degrees C for a solution based zinc-tin-oxide (ZTO) thin-film-transistor (TFT). An AlOx layer was spin-coated from a solution of aluminum chloride (AlCl3) and then annealed at 300 degrees C for 1 h. The breakdown electrical field and leakage current density of the AlOx were found to be similar to 4 MV cm(-1) and 63 mu A cm(-2) at 1 MV cm(-1), respectively. The ZTO layer was prepared by spin-coating or inkjet printing as an active layer of the TFT with AlOx gate dielectric and then annealed at 300 degrees C for 1 h. The TFT made using spin coating exhibited the field-effect mobility of 33 cm(2) V-1 s(-1) in the saturation region, a gate swing of 96 mV dec.(-1) and a threshold voltage of similar to 1.2 V and the inkjet printed TFT showed a field-effect mobility of 24 cm(2) V-1 s(-1).