High capacitance density metal-insulator-metal structures based on a high-κ HfNxOy-SiO2-HfTiOy laminate stack

被引：15

作者：

Mikhelashvili, V. ^{[1
]}

Thangadurai, P. ^{[2
]}

Kaplan, W. D. ^{[2
]}

Eisenstein, G. ^{[1
]}

机构：

[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

[2] Technion Israel Inst Technol, Dept Mat Engn, IL-32000 Haifa, Israel

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 13期

关键词：

14;

D O I：

10.1063/1.2905273

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a metal-insulator-metal (MIM) capacitor containing five laminate films of HfNxOy, SiO2, and HfTiOy. The MIM capacitors exhibit capacitance densities and dielectric constants of 16 fF/mu m(2) and 27 in the as-deposited state and 11 fF/mu m(2) and 30 after thermal annealing. The tangent loss of the annealed structures measured at room temperature and at 0.1 MHz is 0.0055. Low leakage current densities (1.5x10(-7) A/cm(2) at 2 V), linear and quadratic capacitance voltage coefficients of 19 ppm/V and 235 ppm/V-2, respectively, as well as a capacitance temperature coefficient of 650 ppm/degrees C were demonstrated.

引用

页数：3

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