Optical characterization and metal-nonmetal transition of boron-doped Si1-xGex alloy

被引：3

作者：

da Silva, AF

An, CY

de Souza, JC

Alves, AS

da Silva, TS

Dantas, NS

Almeida, JS

da Silva, AVB

Pepe, I

机构：

[1] Inst Nacl Pesquisas Espaciais, INPE, Lab Associado Sensores & Mat, LAS, BR-12201970 Sao Jose Dos Campos, Brazil

[2] Univ Estadual Feira Santa, Dept Ciencias Exatas, BR-44031460 Feira De Santana, BA, Brazil

[3] Univ Fed Bahia, Lab Propriedades Ot, BR-40210340 Salvador, BA, Brazil

来源：

SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 01期

关键词：

D O I：

10.1016/S0038-1101(98)00254-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report measurements of the optical band gap of Si1-xGex, by photoacoustic spectroscopy technique. The material has been obtained by a mechanical alloying process. Due to its technological application, in highperformance bipolar transistors and integrated circuits, the interest in the physical properties of Si1-xGex has recently increased. The metal-nonmetal transition (for x = 0.2) is determined to be 3.2 x 10(18) cm(-3). The optical band gap estimated from the absorption data at high boron concentration shows band gap narrowing when compared to the undoped alloy. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：17 / 20

页数：4

共 32 条

[21] PREPARATION OF AMORPHOUS NI60NB40 BY MECHANICAL ALLOYING [J].

KOCH, CC ;

CAVIN, OB ;

MCKAMEY, CG ;

SCARBROUGH, JO .

APPLIED PHYSICS LETTERS, 1983, 43 (11) :1017-1019

[22] SIMULATION OF BANDGAP NARROWING AND INCOMPLETE IONIZATION IN STRAINED SI1-XGEX ALLOYS ON (001)SI SUBSTRATE (FOR TEMPERATURES FROM 40-K UP TO 400-K) [J].

MAMONTOV, YV ;

WILLANDER, M .

SOLID-STATE ELECTRONICS, 1995, 38 (03) :599-607

[23] THE MINIMUM METALLIC CONDUCTIVITY IN 3 DIMENSIONS [J].

MOTT, NF .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 44 (02) :265-284

[24] Bandgap narrowing in silicon solar cells considering the p-type doping material [J].

Nubile, P ;

daSilva, AF .

SOLID-STATE ELECTRONICS, 1997, 41 (01) :121-124

[25]

Pankove J. I, 1975, OPTICAL PROCESSES SE, P34

[26] INDIRECT BAND-GAP OF COHERENTLY STRAINED GEXSI1-X BULK ALLOYS ON (001) SILICON SUBSTRATES [J].

PEOPLE, R .

PHYSICAL REVIEW B, 1985, 32 (02) :1405-1408

[27] THEORETICAL CALCULATION AND EXPERIMENTAL-EVIDENCE OF THE REAL AND APPARENT BANDGAP NARROWING DUE TO HEAVY DOPING IN P-TYPE SI AND STRAINED SI1-XGEX LAYERS [J].

POORTMANS, J ;

JAIN, SC ;

TOTTERDELL, DHJ ;

CAYMAX, M ;

NIJS, JF ;

MERTENS, RP ;

VANOVERSTRAETEN, R .

SOLID-STATE ELECTRONICS, 1993, 36 (12) :1763-1771

[28] Characterization of highly boron-doped Si, Si1-xGex and Ge layers by high-resolution transmission electron microscopy [J].

Radamson, HH ;

Joelsson, KB ;

Ni, WX ;

Hultman, L ;

Hansson, GV .

JOURNAL OF CRYSTAL GROWTH, 1995, 157 (1-4) :80-84

[29]

SCHWARZ RB, 1986, APPL PHYS LETT, V49, P1017

[30] INFLUENCE OF THERMAL ANNEALINGS IN DIFFERENT ATMOSPHERES ON THE BAND-GAP SHIFT AND RESISTIVITY OF CDS THIN-FILMS [J].

TOMAS, SA ;

VIGIL, O ;

ALVARADOGIL, JJ ;

LOZADAMORALES, R ;

ZELAYAANGEL, O ;

VARGAS, H ;

DASILVA, AF .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (04) :2204-2207

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