Optical characterization and metal-nonmetal transition of boron-doped Si1-xGex alloy

被引：3
作者：
da Silva, AF
An, CY
de Souza, JC
Alves, AS
da Silva, TS
Dantas, NS
Almeida, JS
da Silva, AVB
Pepe, I
机构：
[1] Inst Nacl Pesquisas Espaciais, INPE, Lab Associado Sensores & Mat, LAS, BR-12201970 Sao Jose Dos Campos, Brazil
[2] Univ Estadual Feira Santa, Dept Ciencias Exatas, BR-44031460 Feira De Santana, BA, Brazil
[3] Univ Fed Bahia, Lab Propriedades Ot, BR-40210340 Salvador, BA, Brazil
来源：
SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 01期
关键词：
D O I：
10.1016/S0038-1101(98)00254-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report measurements of the optical band gap of Si1-xGex, by photoacoustic spectroscopy technique. The material has been obtained by a mechanical alloying process. Due to its technological application, in highperformance bipolar transistors and integrated circuits, the interest in the physical properties of Si1-xGex has recently increased. The metal-nonmetal transition (for x = 0.2) is determined to be 3.2 x 10(18) cm(-3). The optical band gap estimated from the absorption data at high boron concentration shows band gap narrowing when compared to the undoped alloy. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：17 / 20
页数：4
相关论文
共 32 条
[1]   Metal-nonmetal transition and resistivity of silicon implanted with bismuth [J].
Abramof, E ;
daSilva, AF ;
Sernelius, BE ;
deSouza, JP ;
Boudinov, H .
JOURNAL OF MATERIALS RESEARCH, 1997, 12 (03) :641-645
[2]   SI-GE ALLOYS - GROWTH, PROPERTIES AND APPLICATIONS [J].
ARIENZO, M ;
IYER, SS ;
MEYERSON, BS ;
PATTON, GL ;
STORK, JMC .
APPLIED SURFACE SCIENCE, 1991, 48-9 :377-386
[3]   MECHANICAL ALLOYING [J].
BENJAMIN, JS .
SCIENTIFIC AMERICAN, 1976, 234 (05) :40-49
[4]  
BENN RC, 1988, APMI P MODERN DEV PO, P18
[5]   METAL TO NONMETAL TRANSITIONS IN DOPED GERMANIUM AND SILICON [J].
BERGGREN, KF .
PHILOSOPHICAL MAGAZINE, 1973, 27 (05) :1027-1040
[6]  
CAILLAT T, 1992, P 11 INT C THERM, P240
[7]  
CODY GD, 1990, P 9 INT C THERM, P182
[8]  
Cook B. A., 1989, Proceedings of the 24th Intersociety Energy Conversion Engineering Conference IECEC-89 (Cat. No.89CH2781-3), P693, DOI 10.1109/IECEC.1989.74542
[9]  
Cook B. A., 1990, P 9 INT C THERM, P234
[10]   Optical determination of the direct bandgap energy of lead iodide crystals [J].
daSilva, AF ;
Veissid, N ;
An, CY ;
Pepe, I ;
deOliveira, NB ;
daSilva, AVB .
APPLIED PHYSICS LETTERS, 1996, 69 (13) :1930-1932
1234