Bulk PZT thick film preparation on silicon wafer and its application for MEMS power generator

被引：1
|
作者：
Tang, Gang [1 ,2 ]
Liu, Jing-quan [1 ]
Li, Yi-gui [1 ]
Liu, He-sheng [1 ,3 ]
Yang, Chun-sheng [1 ]
He, Dan-nong [4 ]
Dao, Viet Dzung [5 ]
Tanaka, Katsuhiko [5 ]
Sugiyama, Susumu [5 ]
机构：
[1] Shanghai Jiao Tong Univ, Natl Key Lab Nano Micro Fabricat Technol, Key Lab Thin Film & Microfabricat, Minist Educ,Inst Micro & Nano Sci & Technol, Shanghai 200240, Peoples R China
[2] Nanchang Inst Technol, Dept Mech & Engn, Nanchang, Jiangxi 330099, Peoples R China
[3] Nanchang Univ, Coll Mech & Elect Engn, Nanchang, Jiangxi 330031, Peoples R China
[4] Natl Engn Res Ctr Nanotechnol, Shanghai AH-200241, Peoples R China
[5] Rtsumeikan Univ, Dept Micro Syst Technol, Shiga, Japan
来源：
OPTOELECTRONIC MATERIALS, PTS 1AND 2 | 2010年 / 663-665卷
基金：
中国国家自然科学基金;
关键词：
Bulk PZT; Thick film; Piezoelectric energy harvesting; Power generator; Epoxy bonding;
D O I：
10.4028/www.scientific.net/MSF.663-665.1115
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper reports on the PZT thick films preparation method by bonding bulk PZT on Si and then lapping PZT to suitable thicknesses. Epoxy resins with preferable thermostability were used as the intermediate adhesive layer in bonding process. A tight bonding of more than 10MPa was attained at suitable gradient bonding temperatures in an oven which were from 30 degrees C up to 105 degrees C according to 15 degrees C per thirty minutes and holding for more than 3h at 105 degrees C, and a pressure of more than 0.05MPa. Some properties of the prepared PZT thick films were tested. Finally, a piezoelectric MEMS power generator was fabricated by using the described techniques of PZT thick films preparation on silicon. The maximum output voltage under the resonant operation was measured.
引用
收藏
页码：1115 / +
页数：2
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