Antiguided vertical cavity surface emitting lasers

被引：0
|
作者：
Mawst, LJ [1 ]
Zhou, D [1 ]
机构：
[1] Univ Wisconsin, Madison, WI 53706 USA
来源：
TESTING RELIABILITY AND APPLICATIONS OF OPTOELECTRONIC DEVICES | 2001年 / 4285卷
关键词：
vertical cavity surface emitting laser; epitaxial growth; semiconductor growth; diode laser;
D O I：
10.1117/12.426880
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Novel single-mode VCSEL designs based on antiguided structures are discussed. Modal characteristics of single-element, 8-12 mum-dia, ARROW-type VCSELs and two-dimensional phase-locked arrays (4x4 elements) of antiguided VCSELs are studied. ARROW-type VCSELs exhibit low loss for the fundamental mode and strong high-order mode suppression as a result of edge radiation leakage. Preliminary results are 1mW single-mode (thermally limited) from 12 mum-dia devices. Two-dimensional arrays of antiguided VCSELs are shown to exhibit resonant coupling if the interelement spacing corresponds to an integer number of half-waves of the lateral radiation leakage. Single-mode emission with all array elements locked "in-phase" is demonstrated for the first time from a monolithic 2-D array of VCSELs. Large phase-locked arrays have potential for > 100mW of single-mode output power with further optimization and efficient heatsinking.
引用
收藏
页码：134 / 145
页数：12
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