Inelastic carrier lifetime in bilayer graphene

被引：6
|
作者：
Park, Cheol-Hwan [1 ,2 ]
Giustino, Feliciano [3 ]
Spataru, Catalin D. [4 ]
Cohen, Marvin L. [1 ,2 ]
Louie, Steven G. [1 ,2 ]
机构：
[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
[3] Univ Oxford, Dept Mat, Oxford OX1 3PH, England
[4] Sandia Natl Labs, Livermore, CA 94551 USA
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 03期
基金：
美国国家科学基金会;
关键词：
BANDGAP;
D O I：
10.1063/1.3675877
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present a first-principles calculation of the inelastic carrier lifetimes in pristine and doped bilayer graphene. The scattering rate arising from electron-electron interactions is smaller than that in graphene by 20-40% on average, and is highly anisotropic. On the other hand, the scattering rate arising from electron-phonon interactions is similar in magnitude to that in graphene and is isotropic. (C) 2012 American Institute of Physics. [doi:10.1063/1.3675877]
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页数：3
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