Neutron and X-ray irradiation of silicon based Mach-Zehnder modulators

被引：12
|
作者：
El Nasr-Storey, S. S. [1 ,2 ]
Detraz, S. [1 ]
Olanterae, L. [1 ]
Sigaud, C. [1 ]
Soos, C. [1 ]
Pezzullo, G. [1 ]
Troska, J. [1 ]
Vasey, F. [1 ]
Zeiler, Marcel [1 ]
机构：
[1] CERN, CH-1211 Geneva 23, Switzerland
[2] Univ Bristol, Bristol BS8 1TL, Avon, England
来源：
JOURNAL OF INSTRUMENTATION | 2015年 / 10卷
关键词：
Radiation damage to electronic components; Front-end electronics for detector readout; DETECTORS;
D O I：
10.1088/1748-0221/10/03/C03040
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We report on our recent investigation into the potential for using silicon-based Mach-Zehnder modulators in the harshest radiation environments of the High-Luminosity LHC. The effect of ionizing and non-ionizing radiation on the performance of the devices have been investigated using the 20 MeV neutron beam line at the Cyclotron Resource Centre in Louvain-La-Neuve and the X-ray irradiation facility in the CERN PH department. The devices were exposed to a total fluence and ionizing dose of 1.2 X 10(15) n cm(-2) and 1.3 MGy respectively.
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页数：10
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