The Pore of the Voltage-Gated Proton Channel

被引:61
作者
Berger, Thomas K. [1 ,2 ]
Isacoff, Ehud Y. [1 ,2 ,3 ]
机构
[1] Univ Calif Berkeley, Dept Mol & Cell Biol, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Helen Wills Neurosci Inst, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Phys Biosci Div, Berkeley, CA 94720 USA
基金
瑞士国家科学基金会; 美国国家卫生研究院;
关键词
SHAKER K+ CHANNEL; GATING PORE; PERIODIC PARALYSIS; SODIUM-CHANNELS; ION-PERMEATION; NADPH OXIDASE; SENSOR REVEALS; HV1; DOMAIN; S4;
D O I
10.1016/j.neuron.2011.11.014
中图分类号
Q189 [神经科学];
学科分类号
071006 ;
摘要
In classical tetrameric voltage-gated ion channels four voltage-sensing domains (VSDs), one from each subunit, control one ion permeation pathway formed by four pore domains. The human Hv1 proton channel has a different architecture, containing a VSD, but lacking a pore domain. Since its location is not known, we searched for the Hv permeation pathway. We find that mutation of the S4 segment's third arginine R211 (R3) compromises proton selectivity, enabling conduction of a metal cation and even of the large organic cation guanidinium, reminiscent of Shaker's omega pore. In the open state, R3 appears to interact with an aspartate (D112) that is situated in the middle of Si and is unique to Hv channels. The double mutation of both residues further compromises cation selectivity. We propose that membrane depolarization reversibly positions R3 next to D112 in the transmembrane VSD to form the ion selectivity filter in the channel's open conformation.
引用
收藏
页码:991 / 1000
页数:10
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