On the temperature dependence of the resistive and surface ionisation response of SnO2 gas sensing layers

被引:15
作者
Oberhuettinger, Carola [1 ]
Hackner, Angelika [1 ]
Mueller, Gerhard [1 ]
Stutzmann, Martin [2 ]
机构
[1] EADS Innovat Works, D-81663 Munich, Germany
[2] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
关键词
Metal oxide; SnO2; Gas response; Surface ionization; MEYER-NELDEL RULE; ORGANIC-COMPOUNDS; MASS-SPECTROMETRY; SENSORS; SENSITIVITY;
D O I
10.1016/j.snb.2011.01.069
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Gas sensing experiments have been performed on SnO2 thin films using a wide range of different analyte gases. In these experiments, the SnO2 layers were specifically configured to observe the familiar resistive (RES) gas response alongside with the novel surface ionisation (SI) response. It is shown that the RES and SI responses, in general, occur in dissimilar temperature ranges and that both follow very different selectivity criteria. Microscopically, both kinds of response proceed through analyte-specific sequences of adsorption, surface reaction, charge transfer and desorption steps. A generalisation of the Ahlers model [1], originally developed to account for the bell-shaped temperature variation of the RES response of thin film metal oxide layers, is shown to quantitatively account for the whole range of SI data. Fits to experimental SI response vs. temperature curves allow the total energy input into the surface ionisation process to be determined and insights into the ionisation mechanism to be gained. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:563 / 571
页数:9
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