The effect of substrate position on the microstructure and mechanical properties of SiC coatings on carbon/carbon composites

被引:23
作者
Long, Ying [1 ,2 ]
Javed, Athar [1 ]
Shapiro, Ian [1 ]
Chen, Zhao-ke [2 ]
Xiong, Xiang [2 ]
Xiao, Ping [1 ]
机构
[1] Univ Manchester, Sch Mat, Ctr Mat Sci, Manchester M1 7HS, Lancs, England
[2] Cent S Univ, State Key Lab Powder Met, Changsha 410083, Peoples R China
关键词
CVD; SiC coating; Substrate position; Microstructure; Mechanical properties; DEPOSITED SILICON-CARBIDE; CHEMICAL-VAPOR-DEPOSITION; FRACTURE-TOUGHNESS; ELASTIC-MODULUS; GROWTH-CHARACTERISTICS; TEMPERATURE; INDENTATION; OXIDATION; FILMS; METHYLTRICHLOROSILANE;
D O I
10.1016/j.surfcoat.2011.07.087
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this work, silicon carbide (SiC) coatings were produced on carbon/carbon composites using a chemical vapour deposition (CVD) method. During deposition, the temperature was fixed at 1200 C and the coatings were produced by placing substrates at three different positions (340, 380 and 420 mm from the inlet) in the CVD reactor. The effect of substrate position on the microstructure and mechanical properties of the SiC coatings were experimentally investigated. The phase composition, surface morphology, defects and microstructure were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM) and Raman Spectroscopy. The hardness and Young's modulus were measured using a nano-indentation method while fracture toughness was evaluated by micro-indentation. It was found that the deposition rate decreased linearly as substrate position moved far from the reactor inlet. In all coatings, only p-sic phase was observed with a high density of stacking faults. It was found that the substrate position in the CVD reactor has a significant effect on the microstructure, grain size and crystallinity of the coating. At 340 and 420 mm substrate positions, a well-developed faceted microstructure with high crystallinity was observed while at 380 mm substrate position, the coating having lenticular-like fine grains with low crystallinity was obtained. The hardness values obtained from the top surface of the coatings are found to be higher than those from the cross-section, although the Young's modulus data (measured from the top surface and cross-section) were observed to be similar. At 380 mm substrate position, hardness, Young's modulus and fracture toughness were found to be the lowest compared to that of the coatings produced at 340 and 420 mm substrate positions. It is concluded that the SiC coatings with better mechanical properties can be produced by adjusting the substrate position in the CVD reactor. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:568 / 574
页数:7
相关论文
共 53 条
  • [1] Anusavice KJ, 1997, J AM CERAM SOC, V80, P1353, DOI 10.1111/j.1151-2916.1997.tb02991.x
  • [2] Fracture toughness of polycrystalline silicon carbide thin films
    Bellante, JJ
    Kahn, H
    Ballarini, R
    Zorman, CA
    Mehregany, M
    Heuer, AH
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (07) : 1 - 3
  • [3] DEPLETION EFFECTS OF SILICON-CARBIDE DEPOSITION FROM METHYLTRICHLOROSILANE
    BESMANN, TM
    SHELDON, BW
    MOSS, TS
    KASTER, MD
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1992, 75 (10) : 2899 - 2903
  • [4] THE GROWTH AND MORPHOLOGY OF CHEMICALLY VAPOR-DEPOSITED SILICON-CARBIDE COATINGS ON CARBON CARBON COMPOSITES
    BUCHANAN, FJ
    LITTLE, JA
    [J]. SURFACE & COATINGS TECHNOLOGY, 1991, 46 (02) : 217 - 226
  • [5] Control of the supersaturation in the CF-PVT process for the growth of silicon carbide crystals: Research and applications
    Chaussende, D
    Ucar, M
    Auvray, L
    Baillet, F
    Pons, M
    Madar, R
    [J]. CRYSTAL GROWTH & DESIGN, 2005, 5 (04) : 1539 - 1544
  • [6] Mechanical properties and oxidation behaviors of carbon/carbon composites with C-TaC-C multi-interlayer
    Chen, Zhao-ke
    Xiong, Xiang
    Li, Guo-dong
    Wang, Ya-lei
    [J]. JOURNAL OF MATERIALS SCIENCE, 2010, 45 (13) : 3477 - 3482
  • [7] Ablation behaviors of carbon/carbon composites with C-SiC-TaC multi-interlayers
    Chen Zhao-ke
    Xiong Xiang
    Li Guo-dong
    Wang Ya-lei
    [J]. APPLIED SURFACE SCIENCE, 2009, 255 (22) : 9217 - 9223
  • [8] GROWTH-CHARACTERISTICS OF CVD BETA-SILICON CARBIDE
    CHENG, DJ
    SHYY, WJ
    KUO, DH
    HON, MH
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (12) : 3145 - 3149
  • [9] STRUCTURE OF CHEMICAL VAPOR-DEPOSITED SILICON-CARBIDE
    CHIN, J
    GANTZEL, PK
    HUDSON, RG
    [J]. THIN SOLID FILMS, 1977, 40 (JAN) : 57 - 72
  • [10] GROWTH OF SILICON-CARBIDE BY CHEMICAL VAPOR-DEPOSITION
    CHOI, BJ
    KIM, DR
    [J]. JOURNAL OF MATERIALS SCIENCE LETTERS, 1991, 10 (14) : 860 - 862