Passivation properties of alumina for multicrystalline silicon nanostructure prepared by spin-coating method

被引：6

作者：

Jiang, Ye ^{[1
]}

Shen, Honglie ^{[1
]}

Yang, Wangyang ^{[1
]}

Zheng, Chaofan ^{[1
]}

Tang, Quntao ^{[1
]}

Yao, Hanyu ^{[1
]}

Raza, Adil ^{[1
]}

Li, Yufang ^{[1
]}

Huang, Chunlai ^{[2
]}

机构：

[1] Nanjing Univ Aeronaut & Astronaut, Jiangsu Key Lab Mat & Technol Energy Convers, Coll Mat Sci & Technol, 29 Yudao St, Nanjing 210016, Jiangsu, Peoples R China

[2] Jiangsu GCL Silicon Mat Technol Dev Co Ltd, Key Lab Silicon Based Elect Mat Jiangsu Prov, 88 Yangshan Rd, Xuzhou 221000, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2018年 / 124卷 / 02期

关键词：

SOLAR-CELLS; BLACK-SILICON; SURFACE PASSIVATION; RECOMBINATION; DEPOSITION; FILMS; LAYER;

D O I：

10.1007/s00339-017-1542-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we report passivation properties of inverted pyramidal nanostructure based multi-crystalline silicon (mc-Si) by Al2O3 films with spin-coating method. Precursors AlCl3 and Al(acac)(3) for Al2O3 films were chosen for comparison. Al2O3/SiOx stacks were found to be able to passivate the nanostructured surface well. With the number of spin-coating up to five, the Al2O3 films could conformally attach the nanostructure. The weighted average reflectance values (ranging from 400-900 nm) of the passivated silicon surface could be reduced to 10.74% (AlCl3) and 11.12% (Al(acac)(3)), and the effective carrier lifetime could reach 7.84 and 16.98 mu s, respectively. This work presented a potential process to fabricate low cost high efficiency mc-Si solar cells.

引用

页数：7

共 29 条

[1] Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge [J].