Effect of Oxygen Pressure on Thermoelectric Properties of p-Type CuAlO2 Films Fabricated by Pulsed Laser Deposition

被引：5

作者：

Saini, Shrikant ^{[1
]}

Mele, Paolo ^{[2
]}

Osugi, Shunsuke ^{[3
]}

Adam, Malik I. ^{[4
]}

机构：

[1] Muroran Inst Technol, Res Ctr Environm Friendly Mat Engn, 27-1 Mizumoto Cho, Muroran, Hokkaido 0508585, Japan

[2] Shibaura Inst Technol, SIT Res Labs, Koto Ku, Toyosu 3-7-5, Tokyo 1358548, Japan

[3] Muroran Inst Technol, Div Prod Syst Engn, 27-1 Mizumoto Cho, Muroran, Hokkaido 0508585, Japan

[4] Univ Malaya, Dept Mech Engn, Kuala Lumpur 50603, Malaysia

来源：

JOURNAL OF MATERIALS ENGINEERING AND PERFORMANCE | 2018年 / 27卷 / 12期

关键词：

CuAlO2; heat harvesting; oxides; pulsed laser deposition; thermoelectrics; thin films; OXIDE MATERIALS; THIN-FILMS; PERFORMANCE; CA3CO4O9; GROWTH;

D O I：

10.1007/s11665-018-3601-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We focus on the growth of p-type CuAlO2 thin films and its thermoelectric properties. Thin films are deposited by pulsed laser deposition technique on single-crystal sapphire substrates varying the oxygen partial pressure. Thin film deposited at oxygen partial pressure of 200 mTorr presents bigger grains (about 10m in size) and shows Seebeck coefficient as high as 270 mu V/K with a conductivity of about 0.8 S/cm so that its power factor is about 5.7 mu W/mK(2) at 800K, twice than observed in the film deposited at 60 mTorr of oxygen.

引用

页码：6286 / 6290

页数：5

共 29 条

[1] Thermoelectric properties and electrical characteristics of sputter-deposited p-CuAlO2 thin films [J].