Breakdown and low-temperature anomalous effects in 6H SiC JFETs

被引：2

作者：

Meneghesso, G ^{[1
]}

Bartolini, A ^{[1
]}

Verzellesi, G ^{[1
]}

Cavallini, A ^{[1
]}

Castaldini, A ^{[1
]}

Canali, C ^{[1
]}

Zanoni, E ^{[1
]}

机构：

[1] Univ Padua, Dipartimento Elettron & Informat, I-35131 Padua, Italy

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746452

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The aim of this work is to describe experimental results concerning on-state weak ionization effects, off-stare gate-drain breakdown phenomena and low-temperature electrical anomalies in buried-gate 6H SiC JFETs. We demonstrate that surface traps and deep impurity levels can give rise: to anomalous phenomena such as I-D-V-DS kink's in the drain current, dispersion of transconductance, negative thermal coefficient of breakdown voltage.

引用

页码：695 / 698

页数：4

共 9 条

[1]

FRISCHHOLZ M, 1996, P 1 EUR C SIC REL MA

[2] IMPACT IONIZATION IN GAAS-MESFETS [J].