Formation mechanism of twin boundaries during crystal growth of silicon

被引：25

作者：

Kutsukake, Kentaro ^{[1
]}

Abe, Takuro ^{[1
]}

Usami, Noritaka ^{[1
]}

Fujiwara, Kozo ^{[1
]}

Morishita, Kohei ^{[2
]}

Nakajima, Kazuo ^{[2
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Kyoto Univ, Grad Sch Energy Sci, Sakyou Ku, Kyoto 6068501, Japan

来源：

SCRIPTA MATERIALIA | 2011年 / 65卷 / 06期

关键词：

Twin boundary; Crystal growth; Silicon; Polycrystal; In situ; TILT GRAIN-BOUNDARIES; MULTICRYSTALLINE SILICON; POLYCRYSTALLINE SILICON; SI;

D O I：

10.1016/j.scriptamat.2011.06.028

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The formation mechanism of twin boundaries in multicrystalline Si was studied using an in situ observation technique. We directly observed the growing interface and analyzed change in the growth rate. We found that the formation of twin boundaries in crystal grains was always accompanied by a marked increase in the growth rate and they were rarely formed when the growth rate was constant at a high value. The formation mechanism is discussed from the viewpoint of driving force. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：556 / 559

页数：4

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