Exciton-phonon coupling in single quantum dots with different barriers

被引：7
|
作者：
Dufaker, D. [1 ]
Mereni, L. O. [2 ]
Karlsson, K. F. [1 ]
Dimastrodonato, V. [2 ]
Juska, G. [2 ]
Holtz, P. O. [1 ]
Pelucchi, E. [2 ]
机构：
[1] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden
[2] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland
来源：
APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 25期
基金：
瑞典研究理事会; 爱尔兰科学基金会;
关键词：
aluminium compounds; gallium arsenide; III-V semiconductors; indium compounds; phonon-exciton interactions; semiconductor quantum dots; VAPOR-PHASE EPITAXY; PHOTOLUMINESCENCE; BIEXCITONS; ABSORPTION; GAAS;
D O I：
10.1063/1.3600781
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The coupling between longitudinal-optical (LO) phonons and neutral excitons in two different kinds of InGaAs pyramidal quantum dots (QDs) embedded in either AlGaAs or GaAs barriers is experimentally examined. We find a slightly weaker exciton-LO-phonon coupling and increased linewidth of the phonon replicas for the QDs with GaAs barriers compared to the ones with AlGaAs barriers. These results, combined with the fact that the LO-phonon energy of the exciton is the same for both kinds of dots, are taken as evidence that the excitons mainly couple to LO-phonons within the QDs. (C) 2011 American Institute of Physics. [doi:10.1063/1.3600781]
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页数：3
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