Hysteresis behavior in 85-nm channel length vertical n-MOSFET's grown by MBE

Vertical n-MOSFET's with channel lengths of 85 nm have been grown by MBE. For drain-to-source voltages V-DS > 3.3 V, these transistors exhibit hysteresis behavior similar to the reported behavior of fully depleted SOI-MOSFET's. Our results also show a gate voltage controlled turn-off of the drain current when the transistor is operating in the hysteresis mode. We have analyzed this behavior in vertical -MOSFET's using 2-D device simulation and our results show a threshold value for the hole concentration across the source-channel junction which is required for the forward biasing of this junction. For a transistor operating in the hysteresis mode, we show that the potential barrier height for electron injection across the source-channel junction increases for increasing negative gate voltages during retrace. This results in a gate controlled turn-off of the drain current for SOI and vertical n-MOSFET's operating in the regenerative mode.