InGaN Laser Diode Mini-Arrays

被引：40

作者：

Perlin, Piotr ^{[1
,2
]}

Marona, Lucja ^{[2
]}

Holc, Katarzyna ^{[1
,2
]}

Wisniewski, Przemek ^{[1
,2
]}

Suski, Tadek ^{[2
]}

Leszczynski, Mike ^{[1
,2
]}

Czernecki, Robert ^{[1
,2
]}

Najda, Stephen ^{[1
]}

Zajac, Marcin ^{[3
]}

Kucharski, Robert ^{[3
]}

机构：

[1] TopGaN Ltd, PL-01142 Warsaw, Poland

[2] Inst High Pressure Phys, PL-01142 Warsaw, Poland

[3] Ammono Ltd, PL-00377 Warsaw, Poland

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 06期

关键词：

D O I：

10.1143/APEX.4.062103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the operation of high-power InGaN laser diode "mini-arrays" consisting of three or five stripes in a common p-contact configuration and compare the results with a single stripe emitter. We observed the following sequence of maximum output powers: 1.1 W for a single emitter, 2.5 W for a three emitter array, and 0.55 W for a five emitter array. The devices emitted light at 408-412 nm wavelength range. The most promising high-power laser diode design turned out to be a three stripe solution. The five stripe "mini-array" suffers from overheating, which causes the device to thermally roll-over at relatively low optical power. In addition to the high power operation, the three stripe device has good spectral characteristics accompanied by very reasonable differential efficiency making it a good candidate for ultra-high optical power systems like laser projectors. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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