Study of the correlation between GaN material properties and the growth conditions of radio frequency plasma-assisted molecular beam epitaxy

被引:8
作者
Amimer, K
Georgakilas, A
Androulidaki, M
Tsagaraki, K
Pavelescu, M
Mikroulis, S
Constantinidis, G
Arbiol, J
Peiro, F
Cornet, A
Calamiotou, M
Kuzmik, J
Davydov, VY
机构
[1] Univ Crete, FORTH, IESL, Heraklion 71110, Crete, Greece
[2] Univ Crete, Dept Phys, Microelect Res Grp, Heraklion 71110, Crete, Greece
[3] Univ Barcelona, Dept Elect, E-08028 Barcelona, Spain
[4] Univ Athens, Dept Phys, Zografos 15784, Greece
[5] Slovak Acad Sci, IEE, SK-84239 Bratislava, Slovakia
[6] AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 80卷 / 1-3期
关键词
GaN thin films; radio frequency plasma-assisted molecular beam epitaxy; strain; surface morphology; defects;
D O I
10.1016/S0921-5107(00)00646-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The material properties of GaN thin films grown by radio frequency (RF) nitrogen plasma som ce molecular beam epitaxy (MBE) on (0001) Al2O3 substrates have been correlated to the V/III flux ratio during GaN growth and to the type and thickness of the buffer layer. The most remarkable observation is the change in the sign of the residual strain, from tensile to compressive as the V/III ratio alters from N-rich to stoichiometric (or slightly Ga-rich) conditions for GaN lavers with a 17 nm AIN buffer layer. The residual strain was significantly reduced for a thinner 5 nm AIN buffer and it was zero for a 20 nm GaN buffer. A reduction of the rms surface roughness from 20 to 3 nm was achieved by decreasing the V/III ratio. Finally, stacking faults were observed only for significantly N-rich growth conditions. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:304 / 308
页数:5
相关论文
共 8 条
[1]   FIRST-ORDER RAMAN EFFECT IN WURTZITE-TYPE CRYSTALS [J].
ARGUELLO, CA ;
ROUSSEAU, DL ;
PORTO, SPS .
PHYSICAL REVIEW, 1969, 181 (03) :1351-&
[2]   Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H-SiC [J].
Davydov, VY ;
Averkiev, NS ;
Goncharuk, IN ;
Nelson, DK ;
Nikitina, IP ;
Polkovnikov, AS ;
Smirnov, AN ;
Jacobsen, MA ;
Semchinova, OK .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (10) :5097-5102
[3]   Correlation between the sign of strain and the surface morphology and defect structure of InAlAs grown on vicinal (111)BInP [J].
Georgakilas, A ;
Tsagaraki, K ;
Harteros, K ;
Hatzopoulos, Z ;
Vilà, A ;
Bécourt, N ;
Peiro, F ;
Cornet, A ;
Chrysanthakopoulos, N ;
Calamiotou, M .
THIN SOLID FILMS, 1998, 336 (1-2) :218-221
[4]   III-nitrides: Growth, characterization, and properties [J].
Jain, SC ;
Willander, M ;
Narayan, J ;
Van Overstraeten, R .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (03) :965-1006
[5]  
Melnik YV, 1997, MRS INTERNET J N S R, V2
[6]   LARGE-BAND-GAP SIC, III-V NITRIDE, AND II-VI ZNSE-BASED SEMICONDUCTOR-DEVICE TECHNOLOGIES [J].
MORKOC, H ;
STRITE, S ;
GAO, GB ;
LIN, ME ;
SVERDLOV, B ;
BURNS, M .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (03) :1363-1398
[7]   GROWTH OF GAN BY ECR-ASSISTED MBE [J].
MOUSTAKAS, TD ;
LEI, T ;
MOLNAR, RJ .
PHYSICA B, 1993, 185 (1-4) :36-49
[8]   Growth of GaN layers onto misoriented (0001) sapphire by metalorganic chemical vapor deposition [J].
Pécz, B ;
di Forte-Poisson, MA ;
Huet, F ;
Radnóczi, G ;
Tóth, L ;
Papaioannou, V ;
Stoemenos, J .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (11) :6059-6067