Equivalent circuit representation of hysteresis in solar cells that considers interface charge accumulation: Potential cause of hysteresis in perovskite solar cells

被引:21
作者
Seki, Kazuhiko [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Nanomat Res Inst NMRI, AIST Tsukuba Cent 5, Tsukuba, Ibaraki 3058565, Japan
关键词
ANOMALOUS HYSTERESIS; V HYSTERESIS; CH3NH3PBI3; ORIGIN; PERFORMANCE; BEHAVIOR;
D O I
10.1063/1.4959247
中图分类号
O59 [应用物理学];
学科分类号
摘要
If charge carriers accumulate in the charge transport layer of a solar cell, then the transient response of the electric field that originates from these accumulated charges results in hysteresis in the current-voltage (J-V) characteristics. While this mechanism was previously known, a theoretical model to explain these J-V characteristics has not been considered to date. We derived an equivalent circuit from the proposed hysteresis mechanism. By solving the equivalent circuit model, we were able to reproduce some of the features of hysteresis in perovskite solar cells. Published by AIP Publishing.
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页数:4
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