Single-Event Characterization of the 16 nm FinFET Xilinx UltraScale plus ™ RFSoC Field-Programmable Gate Array under Proton Irradiation

被引：0
|
作者：
Davis, Philip [1 ]
Lee, David S. [1 ]
Learn, Mark [1 ]
Thorpe, Doug [1 ]
机构：
[1] Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA
来源：
2019 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW) | 2019年
关键词：
D O I：
暂无
中图分类号：
O35 [流体力学]; O53 [等离子体物理学];
学科分类号：
070204 ; 080103 ; 080704 ;
摘要：
This study examines the single-event upset and single-event latch-up susceptibility of the Xilinx 16nm FinFET Zynq UltraScale+ RFSoC FPGA in proton irradiation. Results for SEU in configuration memory, BlockRAM memory, and device SEL are given.
引用
收藏
页码：245 / 249
页数：5
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