共 50 条
X-ray topo-tomography studies of linear dislocations in silicon single crystals
被引:14
作者:
Asadchikov, Victor
[1
]
Buzmakov, Alexey
[1
]
Chukhovskii, Felix
[1
]
Dyachkova, Irina
[1
]
Zolotov, Denis
[1
]
Danilewsky, Andreas
[2
]
Baumbach, Tilo
[3
,4
]
Bode, Simon
[4
]
Haaga, Simon
[2
,3
]
Haenschke, Daniel
[3
]
Kabukcuoglu, Merve
[2
,3
]
Balzer, Matthias
[5
]
Caselle, Michele
[5
]
Suvorov, Ernest
[6
]
机构:
[1] FSRC Crystallog & Photon, Moscow, Russia
[2] Inst Geo & Environm Sci, Crystallog, Freiburg, Germany
[3] Karlsruhe Inst Technol, Inst Photon Sci & Synchrotron Radiat, Karlsruhe, Germany
[4] Karlsruhe Inst Technol, Lab Applicat Synchrotron Radiat, Karlsruhe, Germany
[5] Karlsruhe Inst Technol, Inst Data Proc & Elect, Karlsruhe, Germany
[6] RAS, Inst Solid State Phys, Chernogolovka, Moscow Region, Russia
来源:
JOURNAL OF APPLIED CRYSTALLOGRAPHY
|
2018年
/
51卷
关键词:
X-ray topo-tomography;
polygonal dislocation half-loops;
synchrotron facilities;
Takagi-Taupin equations;
linear dislocations;
silicon crystals;
DIFFRACTION CONTRAST;
DYNAMICAL THEORY;
SIMULATION;
DEFECTS;
D O I:
10.1107/S160057671801419X
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
This article describes complete characterization of the polygonal dislocation half-loops (PDHLs) introduced by scratching and subsequent bending of an Si(111) crystal. The study is based on the X-ray topo-tomography technique using both a conventional laboratory setup and the high-resolution X-ray image-detecting systems at the synchrotron facilities at KIT (Germany) and ESRF (France). Numerical analysis of PDHL images is performed using the Takagi-Taupin equations and the simultaneous algebraic reconstruction technique (SART) tomographic algorithm.
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页码:1616 / 1622
页数:7
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