Effects of antimony and ion damage on carrier localization in molecular-beam-epitaxy-grown GaInNAs

被引：8

作者：

Bank, SR ^{[1
]}

Wistey, MA ^{[1
]}

Yuen, HB ^{[1
]}

Lordi, V ^{[1
]}

Gambin, VF ^{[1
]}

Harris, JS ^{[1
]}

机构：

[1] Stanford Univ, Solid State Photon Lab, Stanford, CA 94305 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2005年 / 23卷 / 03期

关键词：

D O I：

10.1116/1.1878995

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the effects of both nonradiative recombination centers and compositional inhomogeneity on low-temperature localization in GaInNAs quantum wells. With the introduction of antimony and a reduction of nitrogen plasma-related damage during growth, localization energies as low as 2.5 meV are reported for single quantum well samples with room temperature emission at 1.5 mu m. Moreover, low-temperature photoluminescence spectra revealed a broad, sub-band-gap luminescence peak that is ascribed to plasma-related defects. Deviation from the Varshni dependence of the band gap below 50 K was also observed and attributed to compositional inhomogeneity that localizes emission; however, no "S shape" was observed. Localization effects were found to depend upon the excitation density. (c) 2005 American Vacuum Society.

引用

页码：1320 / 1323

页数：4

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