2D Monte Carlo simulation of hole and electron transport in strained Si

被引：18
作者：
Formicone, GF [1 ]
Vasileska, D [1 ]
Ferry, DK [1 ]
机构：
[1] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA
来源：
VLSI DESIGN | 1998年 / 6卷 / 1-4期
关键词：
D O I：
10.1155/1998/67849
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
[No abstract available]
引用
收藏
页码：167 / 171
页数：5
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