2D Monte Carlo simulation of hole and electron transport in strained Si

被引：18
作者：
Formicone, GF [1 ]
Vasileska, D [1 ]
Ferry, DK [1 ]
机构：
[1] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA
来源：
VLSI DESIGN | 1998年 / 6卷 / 1-4期
关键词：
D O I：
10.1155/1998/67849
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
[No abstract available]
引用
收藏
页码：167 / 171
页数：5
相关论文
共 50 条
[31]   Monte Carlo simulation of electron transport in a carbon nanotube [J].
Pennington, G ;
Goldsman, N .
SISPAD 2002: INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2002, :279-282
[32]   A Monte Carlo simulation of secondary electron transport in diamond [J].
Li Peng ;
Xu Zhou ;
Li Ming ;
Yang Xing-Fan .
ACTA PHYSICA SINICA, 2012, 61 (07)
[33]   Monte Carlo simulation of electron transport in doped silicon [J].
KaiblingerGrujin, G ;
Kosina, H ;
Selberherr, S .
HIGH PERFORMANCE COMPUTING ON THE INFORMATION SUPERHIGHWAY - HPC ASIA '97, PROCEEDINGS, 1997, :444-449
[34]   Monte Carlo simulation for low energy electron transport [J].
Dubus, A .
PROCEEDINGS OF THE WORKSHOP "MONTE CARLO METHODS AND MODELS FOR APPLICATIONS IN ENERGY AND TECHNOLOGY", 1999, 6266 :311-+
[35]   Monte Carlo Simulations of Charge Transport in 2D Organic Photovoltaics [J].
Gagorik, Adam G. ;
Mohin, Jacob W. ;
Kowalewski, Tomasz ;
Hutchison, Geoffrey R. .
JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2013, 4 (01) :36-42
[36]   Monte Carlo simulation of non-local transport effects in strained Si on relaxed Si1-xGex heterostructures [J].
Gamiz, F. ;
Roldan, J.B. ;
Lopez-Villanueva, J.A. .
VLSI Design, 1998, 8 (1-4) :253-256
[37]   Electron effective mobility in strained-Si/Si1-xGex MOS devices using Monte Carlo simulation [J].
Aubry-Fortuna, V ;
Dollfus, P ;
Galdin-Retailleau, S .
SOLID-STATE ELECTRONICS, 2005, 49 (08) :1320-1329
[38]   2D hybrid meshes for direct simulation Monte Carlo solvers [J].
Sengil, N. ;
Sengil, U. .
IC-MSQUARE 2012: INTERNATIONAL CONFERENCE ON MATHEMATICAL MODELLING IN PHYSICAL SCIENCES, 2013, 410
[39]   Electron transport in Si/SiGe modulation-doped heterostructures using Monte Carlo simulation [J].
Monsef, F ;
Dollfus, P ;
Galdin-Retailleau, S ;
Herzog, HJ ;
Hackbarth, T .
JOURNAL OF APPLIED PHYSICS, 2004, 95 (07) :3587-3593
[40]   Monte-Carlo investigation of in-plane electron transport in tensile strained Si and Si1-yCy (y ≤ 0.03) [J].
Dollfus, P ;
Galdin, S ;
Hesto, P .
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 1999, 7 (01) :73-77
12345