Studies of bonding defects, and defect state suppression in HfO2 by soft X-ray absorption and photoelectron spectroscopies

被引：9
作者：
Lucovsky, G. [1 ]
Seo, H.
Fleming, L. B.
Luening, J.
Lysaght, P.
Bersuker, G.
机构：
[1] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA
[2] Stanford Synchrotron Radiat Lab, Menlo Pk, CA 94025 USA
[3] SEMATECH, Austin, TX 78741 USA
来源：
SURFACE SCIENCE | 2007年 / 601卷 / 18期
关键词：
transition metal oxides; crystal field and Jahn-Teller d-state splittings; Ab initio molecular orbital theory; intrinsic bonding states; intrinsic defect states;
D O I：
10.1016/j.susc.2007.04.197
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
This paper identifies two-different regimes of nano-crystallinity: (i) thin films with nano-crystallites >3 nm, that display coherent well-defined grain-boundaries, and (ii) thin films with nano-crystallites less than similar to 2 nm, that display neither will-defined grain-boundaries nor lattice planes in high resolution transmission electron microscopy images, but yield an image indicative of clusters of small nano-crystallites with a length scale order of -2 nm. Near edge X-ray absorption spectroscopy, and soft-X-ray photoelectron spectroscopy, combined with visible and UV spectroscopic ellipsometry, provide an unambiguous way to distinguish between these two technologically important regimes of nano -crystalline order, yielding significant information on electronic structure of intrinsic band edge states and intrinsic electronically-active defects. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：4236 / 4241
页数：6
相关论文
共 25 条
  • [1] AUTRON JL, 2004, HIGH K GATE DIELECTR
  • [2] BALLHAUSEN CJ, 1964, MOL ORBITAL THEORY
  • [3] Cotton F. A., 1963, CHEM APPL GROUP THEO
  • [4] Cox P. A., 1992, TRANSITION METAL OXI
  • [5] Vacancy and interstitial defects in hafnia
    Foster, AS
    Gejo, FL
    Shluger, AL
    Nieminen, RM
    [J]. PHYSICAL REVIEW B, 2002, 65 (17) : 1741171 - 17411713
  • [6] Structure and electrical levels of point defects in monoclinic zirconia
    Foster, AS
    Sulimov, VB
    Gejo, FL
    Shluger, AL
    Nieminen, RM
    [J]. PHYSICAL REVIEW B, 2001, 64 (22)
  • [7] Negative oxygen vacancies in HfO2 as charge traps in high-k stacks
    Gavartin, J. L.
    Ramo, D. Munoz
    Shluger, A. L.
    Bersuker, G.
    Lee, B. H.
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (08)
  • [8] The role of nitrogen-related defects in high-k dielectric oxides:: Density-functional studies -: art. no. 053704
    Gavartin, JL
    Shluger, AL
    Foster, AS
    Bersuker, GI
    [J]. JOURNAL OF APPLIED PHYSICS, 2005, 97 (05)
  • [9] Gray H. B., 1965, Electrons and Chemical Bonding
  • [10] Effect of O2 post-deposition anneals on the properties of ultra-thin SiOx/ZrO2 gate dielectric stacks
    Houssa, M
    Naili, M
    Zhao, C
    Bender, H
    Heyns, MM
    Stesmans, A
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (01) : 31 - 38
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