Decoupling of Optical and Electrical Properties of Rear Contact CIGS Solar Cells

被引:11
作者
Cunha, Jose M. V. [1 ,2 ,3 ]
Lopes, Tomas S. [1 ]
Bose, Sourav [1 ,4 ]
Hultqvist, Adam [4 ]
Chen, Wei-Chao [4 ]
Donzel-Gargand, Olivier [1 ,4 ]
Ribeiro, Rodrigo M. [1 ]
Oliveira, Antonio J. N. [1 ]
Edoff, Marika [4 ]
Fernandes, Paulo A. [1 ,3 ,5 ]
Salome, Pedro M. P. [1 ,2 ]
机构
[1] INL Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal
[2] Univ Aveiro, Dept Fis, Campus Univ Santiago, P-3810193 Aveiro, Portugal
[3] Univ Aveiro, I3N, Campus Univ Santiago, P-3810193 Aveiro, Portugal
[4] Uppsala Univ, Angstrom Solar Ctr, Solid State Elect, Angstrom Lab, SE-75121 Uppsala, Sweden
[5] Inst Politecn Porto, Inst Super Engn Porto, Dept Fis, CIETI, P-4200072 Porto, Portugal
来源
IEEE JOURNAL OF PHOTOVOLTAICS | 2019年 / 9卷 / 06期
关键词
Cu(In; Ga)Se-2; (CIGS); passivation; semiconductors; ultrathin; HIGH-EFFICIENCY; PASSIVATION;
D O I
10.1109/JPHOTOV.2019.2933357
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
A novel architecture that comprises rear interface passivation and increased rear optical reflection is presented with the following advantages: i) enhanced optical reflection is achieved by the deposition of a metallic layer over the Mo rear contact; ii) improved interface quality with CIGS by adding a sputtered Al2O3 layer over the metallic layer; and, iii) optimal ohmic electrical contact ensured by rear-openings refilling with a second layer of Mo as generally observed from the growth of CIGS on Mo. Hence, a decoupling between the electrical function and the optical purpose of the rear substrate is achieved. We present in detail the manufacturing procedure of such type of architecture together with its benefits and caveats. A preliminary analysis showing an architecture proof-of-concept is presented and discussed.
引用
收藏
页码:1857 / 1862
页数:6
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