Reaction of interfacial layer and trapping in HfO2 gated MOS structures
被引:0
作者:
Liu, YX
论文数: 0引用数: 0
h-index: 0
机构:
Yale Univ, New Haven, CT 06520 USAYale Univ, New Haven, CT 06520 USA
Liu, YX
[1
]
Wang, XW
论文数: 0引用数: 0
h-index: 0
机构:
Yale Univ, New Haven, CT 06520 USAYale Univ, New Haven, CT 06520 USA
Wang, XW
[1
]
Ma, TP
论文数: 0引用数: 0
h-index: 0
机构:
Yale Univ, New Haven, CT 06520 USAYale Univ, New Haven, CT 06520 USA
Ma, TP
[1
]
Lee, LS
论文数: 0引用数: 0
h-index: 0
机构:
Yale Univ, New Haven, CT 06520 USAYale Univ, New Haven, CT 06520 USA
Lee, LS
[1
]
Tsai, MJ
论文数: 0引用数: 0
h-index: 0
机构:
Yale Univ, New Haven, CT 06520 USAYale Univ, New Haven, CT 06520 USA
Tsai, MJ
[1
]
Chou, YW
论文数: 0引用数: 0
h-index: 0
机构:
Yale Univ, New Haven, CT 06520 USAYale Univ, New Haven, CT 06520 USA
Chou, YW
[1
]
机构:
[1] Yale Univ, New Haven, CT 06520 USA
来源:
2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS
|
2004年
关键词:
D O I:
暂无
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
This paper presents experimental evidence of severe chemical reactions between physical-vapor-deposited (PVD) HfO2 and the underlying SiO2 interfacial layer, resulting in undesired trapping problems. In contrast, it will also show that HfO2 does not react with SiN. Correspondingly, MOS capacitors made with HfO2/SiN as the dielectric stack exhibit no trapping related problems at all. It should be noted that, the term SiN in this paper actually means SiON where the oxygen is unintentionally incorporated.