Influence of Bi on morphology and optical properties of InAs QDs

被引：10

作者：

Wang, Lijuan ^{[1
]}

Pan, Wenwu ^{[1
]}

Chen, Xiren ^{[2
]}

Wu, Xiaoyan ^{[1
]}

Shao, Jun ^{[2
]}

Wang, Shumin ^{[1
,3
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, 865 Chang Ning Rd, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Tech Phys, 500 Yu Tian Rd, Shanghai 200083, Peoples R China

[3] Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden

来源：

OPTICAL MATERIALS EXPRESS | 2017年 / 7卷 / 12期

基金：

中国国家自然科学基金; 瑞典研究理事会;

关键词：

MOLECULAR-BEAM EPITAXY; 1.3; MU-M; QUANTUM-DOT LASERS; GROWTH; BISMUTH; GAAS; GAAS1-XBIX;

D O I：

10.1364/OME.7.004249

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study the tsurface morphology and photoluminescence (PL) property of InAs quantum dots (QDs) on GaAs using bismuth (Bi) in the layer prior to or after the growth of QDs. Incorporating Bi in the layer prior to the QD deposition delays the onset of InAs QD formation resulting in a decrease in QD height and density. As a surfactant, adding Bi in the GaAs capping layer at a high growth temperature reduces the In surface diffusion length leading to uniform and well preserved InAs QDs in terms of height and density. The incorporation of 3% Bi at a low growth temperature, which forms a GaAsBi capping layer, can effectively lower the PL transition energy up to 163 meV and reduce the PL linewidth, leading to an emission wavelength of 1.365 mu m at 77 K. (c) 2017 Optical Society of America

引用

页码：4249 / 4257

页数：9

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