Surface modifications in diamond-like carbon films submitted to low-energy nitrogen ion bombardment

被引:5
作者
Castañeda, SI
Espinoza, VAA
Freire, FL
Franceschini, DF
Jacobsohn, LG
机构
[1] Pontificia Univ Catolica Rio de Janeiro, Dept Fis, BR-22453970 Rio De Janeiro, Brazil
[2] Univ Fed Fluminense, Inst Fis, BR-24210340 Niteroi, RJ, Brazil
关键词
amorphous carbon; ion implantation; plasma etching; AFM; XPS; ion beam analysis;
D O I
10.1016/S0168-583X(00)00562-0
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Amorphous hydrogenated carbon films (a-C:H) films deposited by plasma enhanced chemical vapor deposition in CH4 atmosphere were submitted to nitrogen r.f.-plasma treatment. The influence of several parameters was investigated: the chamber pressure, ranging from 0.5 to 10 Pa, the self-bias voltage in the range between -50 and -500 V and the exposure time. The erosion rate was determined by profilometry. It increases as the self-bias increases and tends to saturate for higher pressures. The nitrogen incorporated in the films was measured by nuclear reaction analysis. The results indicate a decrease in the N content as the pressure or the self bias increase. The chemical bonds were probed by XPS and two chemical environments can be identified, one with N atoms surrounded by C atoms and the other one with N atoms binding to II. Surface roughness and friction coefficient modifications were followed by atomic force and lateral force microscopies. The surface roughness is independent on the value of the self-bias voltage, while the friction coefficient decreases. (C) 2001 Elsevier Science B.V, All rights reserved.
引用
收藏
页码:699 / 704
页数:6
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