A survey on fault injection methods of digital integrated circuits

被引:40
作者
Eslami, Mohammad [1 ]
Ghavami, Behnam [1 ]
Raji, Mohsen [2 ]
Mahani, Ali [1 ]
机构
[1] Shahid Bahonar Univ Kerman, Dept Engn, Kerman 7345199665, Iran
[2] Shiraz Univ, Sch Elect & Comp Engn, Shiraz 7134851154, Iran
关键词
Reliability assessment; Fault simulation; Fault injection; Digital circuits; SOFT ERROR RATE; SER ESTIMATION; SINGLE; OPTIMIZATION; RELIABILITY; EMULATION; MASKING; DEVICES; DESIGN; IMPACT;
D O I
10.1016/j.vlsi.2019.11.006
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
One of the most popular methods for reliability assessment of digital circuits is Fault Injection (Fl) in which the behavior of the circuit is simulated in presence of faults. In this paper, we present a survey of FI techniques as well as classifying these techniques considering different aspects and criteria to bring out their similarities and differences. The goal of this paper is to help the researchers and reliable circuit designers in gaining insights into the state-of-art in FI techniques and motivate them to further improve these techniques for more efficient reliability evaluation of digital circuit designs of tomorrow.
引用
收藏
页码:154 / 163
页数:10
相关论文
共 60 条
[41]   Fault Simulation and Emulation Tools to Augment Radiation-Hardness Assurance Testing [J].
Quinn, Heather M. ;
Black, Dolores A. ;
Robinson, William H. ;
Buchner, Stephen P. .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (03) :2119-2142
[42]  
Rajaraman R., 2006, P INT C VLSI DES, P159
[43]  
Ramanarayanan R., 2009, IEEE T DEPEND SECURE, V6, P3007
[44]   Computing the soft error rate of a combinational logic circuit using parameterized descriptors [J].
Rao, Rajeev R. ;
Chopra, Kaviraj ;
Blaauw, David T. ;
Sylvester, Dennis M. .
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2007, 26 (03) :468-479
[45]  
Sari A., 2014, Proceedings of the 2014 ACM/SIGDA International Symposium on Field-programmable Gate Arrays, P237, DOI DOI 10.1145/2554688.2554767
[46]   Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Test Guideline for Proton and Heavy Ion Single-Event Effects [J].
Schwank, James R. ;
Shaneyfelt, Marty R. ;
Dodd, Paul E. .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (03) :2101-2118
[47]   Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Radiation Environments, Physical Mechanisms, and Foundations for Hardness Assurance [J].
Schwank, James R. ;
Shaneyfelt, Marty R. ;
Dodd, Paul E. .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (03) :2074-2100
[48]   Impact of scaling on soft-error rates in commercial microprocessors [J].
Seifert, N ;
Zhu, XW ;
Massengill, LW .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2002, 49 (06) :3100-3106
[49]   Multi-cell upset probabilities of 45nm high-k plus metal gate SRAM devices in terrestrial and space environments [J].
Seifert, N. ;
Gill, B. ;
Foley, K. ;
Relangi, P. .
2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL, 2008, :181-+
[50]   Using Boolean satisfiability for computing soft error rates in early design stages [J].
Shazli, S. Z. ;
Tahoori, M. B. .
MICROELECTRONICS RELIABILITY, 2010, 50 (01) :149-159