Self-Assembly Patterning for sub-15nm Half-Pitch: A Transition from Lab to Fab

被引:68
作者
Bencher, Chris [1 ]
Smith, Jeffrey [1 ]
Miao, Liyan [1 ]
Cai, Cathy [1 ]
Chen, Yongmei [1 ]
Cheng, Joy Y. [2 ]
Sanders, Daniel P. [2 ]
Tjio, Melia [2 ]
Truong, Hoa D. [2 ]
Holmes, Steven [3 ]
Hinsberg, William D. [2 ]
机构
[1] Appl Mat Inc, 3225 Oakmead Village Dr, Santa Clara, CA 95054 USA
[2] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA
[3] IBM Albany Nanotech, Albany, NY 12203 USA
来源
ALTERNATIVE LITHOGRAPHIC TECHNOLOGIES III | 2011年 / 7970卷
关键词
PS-b-PMMA; 12nm; DSA; directed self-assembly; lamellae; quadruple patterning; defect density; dislocation; LITHOGRAPHY;
D O I
10.1117/12.881293
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Directed self-assembly is an emerging technology that to-date has been primarily driven by research efforts in university and corporate laboratory environments. Through these environments, we have seen many promising demonstrations of forming self-assembled structures with small half pitch (<15 nm), registration control, and various device-oriented shapes. Now, the attention turns to integrating these capabilities into a 300mm pilot fab, which can study directed self-assembly in the context of a semiconductor fabrication environment and equipment set. The primary aim of this study is to create a 300mm baseline process of record using a 12nm half-pitch PS-b-PMMA lamellae block copolymer in order to establish an initial measurement of the defect density due to inherent polymer phase separation defects such as dislocations and disclinations.
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页数:9
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