Highly linear voltage follower based on local feedback and cascode transistor with dynamic biasing

被引：4

作者：

Lujan, C. I. ^{[1
]}

Torralba, A. ^{[1
]}

Carvajal, R. G. ^{[1
]}

Ramirez-Angulo, J. ^{[2
]}

机构：

[1] Univ Seville, Dept Elect Engn, E-41092 Seville, Spain

[2] New Mexico State Univ, Klipsch Sch Elect Engn, Las Cruces, NM 88003 USA

来源：

ELECTRONICS LETTERS | 2011年 / 47卷 / 04期

关键词：

D O I：

10.1049/el.2011.0037

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new highly linear voltage follower is proposed based on the local feedback loop of a flipped-voltage-follower and a cascode transistor with dynamic biasing, which outperforms classical solutions in terms of linearity. Post-layout simulations for a 0.5 mu m CMOS technology validate the proposed structure.

引用

页码：244 / +

页数：2

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