Gate Current in p-GaN Gate HEMTs as a Channel Temperature Sensitive Parameter: A Comparative Study between Schottky- and Ohmic-Gate GaN HEMTs

被引：6

作者：

Borghese, Alessandro ^{[1
]}

Di Costanzo, Alessandro ^{[1
]}

Riccio, Michele ^{[1
]}

Maresca, Luca ^{[1
]}

Breglio, Giovanni ^{[1
]}

Irace, Andrea ^{[1
]}

机构：

[1] Univ Naples Federico II, Dept Elect Engn & Informat Technol, I-80125 Naples, Italy

来源：

ENERGIES | 2021年 / 14卷 / 23期

关键词：

GaN; HEMT; gate driver; p-GaN gate; TSEP; Schottky contact; Ohmic contact; short circuit; boost converter; MODE ALGAN/GAN HEMTS; THRESHOLD VOLTAGE; LEAKAGE CURRENT; POLARIZATION; PERFORMANCE;

D O I：

10.3390/en14238055

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this work, a comparison between the gate-driving requirements of p-GaN HEMTs with gate contact of Schottky and Ohmic type is presented. Furthermore, the presence of a gate current of different magnitude is experimentally verified for both types of devices. Successively, the possibility of using the gate current as a temperature-sensitive parameter and its monitoring during real circuit operation is proposed. The viability of monitoring the gate current without introducing additional complexity in the gate driver is examined through experimental measurements on commercially available p-GaN HEMTs.

引用

页数：12

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