Preparation of CdTe coatings using the chemical deposition method

被引:42
作者
Sotelo-Lerma, M [1 ]
Zingaro, RA
Castillo, SJ
机构
[1] Texas A&M Univ, Dept Chem, College Stn, TX 77843 USA
[2] Univ Sonora, Dept Invest Polimeros & Mat, Hermosillo 83000, Sonora, Mexico
[3] Univ Sonora, Dept Fis, Hermosillo 83000, Sonora, Mexico
[4] Univ Sonora, DIFUS, Hermosillo 83000, Sonora, Mexico
关键词
cadmium telluride; rongalite; ion exchange; semiconductors;
D O I
10.1016/S0022-328X(00)00597-0
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
CdTe coatings have been prepared by the reaction between films of cadmium hydroxide deposited on glass and a solution prepared by the dissolution of tellurium in hydroxymethane sulfinic acid. The films of CdTe having thicknesses in the range of 1 mum have been deposited by immersing the cadmium hydroxide coatings in an alkaline solution containing a tellurium compound at 5 degreesC, which is warmed to 70 degreesC. Annealing at ca. 150 degreesC for 24 h gives highly crystalline, cubic CdTe. The preparation of an aqueous solution containing tellurium, which remains stable, is essential for the success of the process. Conditions for the preparation of such a solution are described. Details for the preparation of thin films of Cd(OH)(2) on glass, essential for the success of the process, are also described. The CdTe obtained was cubic, has a band gap energy of 1.51 eV, but does not display high photosensitivity. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:81 / 86
页数:6
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