PIN Germanium Photodetector Fabrication Issues and Manufacturability

被引：6

作者：

Vu, Vu A. ^{[1
]}

Ioannou, Dimitris E. ^{[2
]}

Kamocsai, Robert ^{[3
]}

Hyland, Sandra L. ^{[3
]}

Pomerene, Andrew ^{[3
]}

Carothers, Daniel ^{[4
]}

机构：

[1] BAE Syst Inc, Manassas, VA 20110 USA

[2] George Mason Univ, ECE Dept, Fairfax, VA 22030 USA

[3] BAE Syst Inc, Manassas, VA 20110 USA

[4] BAE Syst Inc, Merrimack, NH 03054 USA

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 2010年 / 23卷 / 03期

关键词：

Crystal growth; germanium; photodetectors; process control; GROWTH; SI;

D O I：

10.1109/TSM.2010.2050080

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have designed and fabricated high-performance germanium vertical and lateral PIN photodetectors which can be integrated into electronic-photonic circuits and manufactured in a standard CMOS foundry. The performance of these devices will be reported in another paper. This paper describes production process issues and manufacturability. The intent of this paper is to provide solutions to fabrication process issues, to provide methods of cutting costs by simplifying fabrication processes, and to improve yield by widening the process tolerance windows. This paper discusses all the process issues encountered and provides solutions for each of them.

引用

页码：411 / 418

页数：8

共 19 条

[1] Study of the defect elimination mechanisms in aspect ratio trapping Ge growth [J].