Fabrication, Modeling, and Characterization of High-Aspect-Ratio Coplanar Waveguide

被引：9

作者：

Todd, Shane T. ^{[1
]}

Huang, Xiaojun T. ^{[2
]}

Bowers, John E. ^{[1
]}

MacDonald, Noel C. ^{[2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mech Engn, Santa Barbara, CA 93106 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2010年 / 58卷 / 12期

关键词：

Coplanar waveguides (CPWs); high aspect ratio; microelectromechanical systems (MEMS); micromachining; transmission lines; RF CMOS; TRANSMISSION-LINES; CONDUCTOR-LOSS; CMOS; MICROWAVE; SILICON; INTERCONNECTS; CIRCUITS; DEVICES; FILTERS; DESIGN;

D O I：

10.1109/TMTT.2010.2086531

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A silicon micromachining process has been developed to fabricate high-aspect-ratio coplanar waveguide (hicoplanar). A new closed-form analytical transmission line model that is valid for both conventional coplanar waveguide (CPW) and hicoplanar is introduced and compared with simulations and experimental results. The major novelties of the model are that it includes the effect of the conductor height on the output parameters and combines Wheeler's inductance rule and perturbation theory to predict the line resistance. Transmission lines with characteristic impedances of 18-25 Omega have been fabricated on high-resistivity silicon. Attenuation was measured to be 2.4-3.4 dB/cm at 30 GHz before silicon removal and 1.7-2.4 dB/cm at 30 GHz after silicon removal. The analytical model is compared with Ansoft High Frequency Structure Simulator simulations and experimental data and shows excellent agreement.

引用

页码：3790 / 3800

页数：11

共 28 条

[1] Characteristics of microfabricated rectangular coax in the Ka band [J].

Brown, ER ;

Cohen, AL ;

Bang, CA ;

Lockard, MS ;

Byrne, BW ;

Vandelli, NM ;

McPherson, DS ;

Zhang, G .

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2004, 40 (05) :365-368

[2] Shielded passive devices for silicon-based monolithic microwave and millimeter-wave integrated circuits [J].

Cheung, TSD ;

Long, JR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2006, 41 (05) :1183-1200

[3] PLANAR MICROWAVE AND MILLIMETER-WAVE LUMPED ELEMENTS AND COUPLED-LINE FILTERS USING MICROMACHINING TECHNIQUES [J].

CHI, CY ;

REBEIZ, GM .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1995, 43 (04) :730-738

[4] Millimeter-wave CMOS design [J].

Doan, CH ;

Emami, S ;

Niknejad, AM ;

Brodersen, RW .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2005, 40 (01) :144-155

[5]

FILIPOVIC DS, 2006, MICROW REV, V12, P11

[6]

FORMAN MA, 2006, P AS PAC MICR C DEC, P1905

[7] 60 GHz single-chip front-end MMICs and systems for multi-Gb/s wireless communication [J].

Gunnarsson, Sten E. ;

Karnfelt, Camilla ;

Zirath, Herbert ;

Kozhuharov, Rumen ;

Kuylenstierna, Dan ;

Fager, Christian ;

Ferndahl, Mattias ;

Hansson, Bertil ;

Alping, Arne ;

Hallbjorner, Paul .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (05) :1143-1157

[8] QUASI-TEM DESCRIPTION OF MMIC COPLANAR LINES INCLUDING CONDUCTOR-LOSS EFFECTS [J].

HEINRICH, W .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1993, 41 (01) :45-52

[9] Si-micromachined coplanar waveguides for use in high-frequency circuits [J].

Herrick, KJ ;

Schwarz, TA ;

Katehi, LPB .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1998, 46 (06) :762-768

[10] Millimeter-wave devices and circuit blocks up to 104 GHz in 90 nm CMOS [J].

Heydari, Babak ;

Bohsali, Mounir ;

Adabi, Ehsan ;

Niknejad, Ali M. .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (12) :2893-2903

← 1 2 3 →