Temperature and series resistance effect on the forward bias current-voltage (I-V) characteristics of In/p-InP Schottky barrier diode (SBD)

In this study, the forward bias current-voltage (I-V) characteristics of In/p-InP Schottky Barrier diode (SBD) have been examined in the temperature range of 120-320 K with a temperature step of 40 K. Experimental results show that the values of ideality factor (n) and zero-bias barrier height square(bo) were found strongly temperature dependent and while the value square(bo) increases, the n decreases with increasing temperature. Such behavior of square(bo) and n were interpreted on the basis of the existence of Gaussian distribution (GD) of the barrier heights (BHs) around a mean value due to BH inhomogeneities at metal/semiconductor (M/S) interface. The deviation form lineerity Ln I-V plots in the high bias range was also attributed to series resistance (R(s)) effect. In addition, the values of series resistance (R(s)) and shunt resistance (R(sh)) were obtained as a function of temperature and applied bias voltage using Ohm's Law. The values of the R(s) and (R(sh)) were also found strongly temperature and applied bias voltage dependent such that their values increase with increasing temperature and applied bias voltage. The value of R(s) decreases with increasing temperature for each temperature and applied bias voltage. The changing of the R(s) becomes independent form temperature at high voltage region. Non linear Ln I-V plots at high bias region was due to R(s) effect. While the values of R(s), R(sh) and n decrease, Phi(bo) and l(o) increase with increasing temperature.