Low-operating-voltage polymer thin-film transistors based on poly(3-hexylthiophene)

被引：2

作者：

Liu Yu-Rong ^{[1
]}

Chen Wei ^{[1
]}

Liao Rong ^{[1
]}

机构：

[1] S China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510640, Guangdong, Peoples R China

来源：

ACTA PHYSICA SINICA | 2010年 / 59卷 / 11期

关键词：

polymer thin-film transistors; poly(3-hexylthiophene); field-effect mobility; high-k gate dielectric; FIELD-EFFECT TRANSISTORS; HIGH-MOBILITY;

D O I：

10.7498/aps.59.8088

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Polymer-based thin film transistors (PTFTs) with poly(3-hexylthiophene) (P3HT) as semiconducting active layers are successfully fabricated on silicon substrates in air which are used as gate electrods. HfTiO film deposited by RF sputtering method is used as gate insulators,and gold metal is used as source and drain electrodes. The HfTiO surface is modified by using octadecyltrichlorosilane solution in the fabrication process. Experimental results indicate that the PTFTs show good saturation behaviors at low drive voltages (< -1 V) with a threshold voltages of 0.4 V and field-effect mobility of 2. 2 x 10(-2) cm(2)/V . s. The frequency-dependence and hysteresis effect are observed in the C-V measurements for the metal-polymer-oxide-silicon (MPOS) capacitors, and discussed in detail to understand their physical mechanism.

引用

页码：8088 / 8092

页数：5

共 16 条

[1] Ta2O5 as gate dielectric material for low-voltage organic thin-film transistors [J].

Bartic, C ;

Jansen, H ;

Campitelli, A ;

Borghs, S .

ORGANIC ELECTRONICS, 2002, 3 (02) :65-72

[2] Thermal annealing-induced enhancement of the field-effect mobility of regioregular poly(3-hexylthiophene) films [J].

Cho, Shinuk ;

Lee, Kwanghee ;

Yuen, Jonathan ;

Wang, Guangming ;

Moses, Daniel ;

Heeger, Alan J. ;

Surin, Mathieu ;

Lazzaroni, Roberto .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (11)

[3] Organic field effect transistor mobility from transient response analysis [J].

Dunn, L ;

Basu, D ;

Wang, L ;

Dodabalapur, A .

APPLIED PHYSICS LETTERS, 2006, 88 (06)

[4] Improving the performance of the organic thin-film transistors with thin insulating lithium fluoride buffer layer [J].

Hu, Wei ;

Zhao, Yi ;

Hou, Jingying ;

Ma, Chunsheng ;

Liu, Shiyong .

MICROELECTRONICS JOURNAL, 2007, 38 (4-5) :632-636

[5] An organic thin-film transistor of high mobility by dielectric surface modification with organic molecule [J].

Kim, JM ;

Lee, JW ;

Kim, JK ;

Ju, BK ;

Kim, JS ;

Lee, YH ;

Oh, MH .

APPLIED PHYSICS LETTERS, 2004, 85 (26) :6368-6370

[6] High capacitance organic field-effect transistors with modified gate insulator surface [J].

Majewski, LA ;

Schroeder, R ;

Grell, M ;

Glarvey, PA ;

Turner, ML .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (10) :5781-5787

[7]

NICOLLIAN EH, 1982, MOS METAL OXIDE SEMI, P223

[8] Solution-Processed Bootstrapped Organic Inverters Based on P3HT With a High-k Gate Dielectric Material [J].

Raval, Harshil Narendra ;

Tiwari, Shree Prakash ;

Navan, Ramesh R. ;

Mhaisalkar, Subodh G. ;

Rao, V. Ramgopal .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (05) :484-486

[9] Array of organic thin film transistors integrated with organic light emitting diodes on a plastic substrate [J].

Ryu, Gi-Seong ;

Choe, Ki-Beom ;

Song, Chung-Kun .

THIN SOLID FILMS, 2006, 514 (1-2) :302-305

[10]

SCHRODER DK, 1998, SEMICONDUCTOR MAT DE, P376

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