Efficient single photon detection by quantum dot resonant tunneling diodes

被引：158
作者：
Blakesley, JC
See, P
Shields, AJ
Kardynal, BE
Atkinson, P
Farrer, I
Ritchie, DA
机构：
[1] Toshiba Res Europe Ltd, Cambridge CB4 0WE, England
[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
来源：
PHYSICAL REVIEW LETTERS | 2005年 / 94卷 / 06期
关键词：
D O I：
10.1103/PhysRevLett.94.067401
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We demonstrate that the resonant tunnel current through a double-barrier structure is sensitive to the capture of single photoexcited holes by an adjacent layer of quantum dots. This phenomenon could allow the detection of single photons with low dark count rates and high quantum efficiencies. The magnitude of the sensing current may be controlled via the thickness of the tunnel barriers. Larger currents give improved signal to noise and allow sub-mus photon time resolution.
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页码：1 / 4
页数：4
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